High-Performance Metallized Ceramic Substrates for Advanced Electronic Applications
Product Overview
Our metallized Ceramic Substrates are the foundation for next-generation microelectronics. By applying high-purity metallic thin films to advanced ceramic materials like Alumina ($Al_2O_3$) and Aluminum Nitride (AlN), we create high-performance interconnect platforms. These substrates provide a superior solution for applications demanding excellent thermal management, high-frequency electrical performance, and exceptional reliability. From complex RF modules to High-power Laser Packaging, our substrates offer a robust and stable base for mounting and connecting sensitive semiconductor devices, enabling higher power densities and miniaturization.
Technical Specifications: Material Properties
Parameter
Alumina (99.6% $Al_2O_3$)
Aluminum Nitride (AlN)
Thermal Conductivity (W/m·K)
~27
>170
CTE (ppm/K, RT-400°C)
7.0
4.6 (Closely matches Silicon)
Dielectric Constant (@1MHz)…