Drilled Aluminum Nitride Ceramic Substrate With Hole

Drilled Aluminum Nitride (AlN) Ceramic Substrate with Hole Puwei's Drilled Aluminum Nitride Ceramic Substrates are engineered for advanced thermal management and electrical insulation in demanding electronic applications. These precision substrates feature strategically placed holes for enhanced functionality in wire bonding, cooling, and assembly, making them ideal for high-power microelectronic components, RF circuits, and thermoelectric cooling assemblies. Combining exceptional thermal conductivity (≥175 W/m·K) with superior electrical insulation, they are a cornerstone solution for modern electronic packaging and microelectronics.   Technical Specifications Material: High-Purity Aluminum Nitride (AlN). Thermal Conductivity: Standard grade ≥175 W/m·K, High grade ≥200 W/m·K. Thickness Range: 0.10 mm to 2.0 mm. Hole Tolerance: Precision drilling within ±0.05 mm. Surface Finish: Options include grinding, as-fired, or polishing. Electrical Insulation: Dielectric Strength >15 kV…

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