High Voltage IGBT DXG25N120H 1200V 25A

Semiconductor Discrete Devices -- IGBT Single Tube   Features  1200V, 25A ,VCE(sat)(typ.)=2.3 V@VGE=15V  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Square RBSOA   General Description Offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications.     *A Discrete IGBT (Insulated Gate Bipolar Transistor Single Tube) is a separately packaged semiconductor power switching device. It integrates an IGBT structure (typically with an anti-parallel freewheeling diode) on a single chip, housed in a standard discrete package (e.g., TO-247, TO-220) with three terminals (Gate, Collector, Emitter). Its core function is to act as a high-voltage, high-current, high-speed electronic switch, controlled by the gate voltage.

IGBT Single Tube Power MOSFET IGBT Module Intelligent Power Modules(IPM) Aluminum Electrolytic Capacitors