C4H10P800A GaN Power Transistor for Advanced Applications

Part Number: Ampleon C4H10P800A   Device Type: N-channel GaN (Gallium Nitride) Asymmetric Doherty RF Power Transistor, plastic packaged, 50Ω optimized, designed for final-stage Doherty power amplification in 4G/5G sub-1GHz macro base stations   1. Key Specifications   Manufacturer: Ampleon Technology: GaN on SiC (Gallium Nitride on Silicon Carbide) Package: OMP-780 (High-power plastic package, high thermal dissipation, cost-effective) Frequency Range: 600 MHz – 1000 MHz (covers sub-1GHz 4G/5G bands: 8/20/28, n5/n8/n20/n28) Supply Voltage: VDS = 50 V (typical), VDSmax = 55 V Output Power (P3dB, CW): 800 W @942 MHz, 50 V, Class AB, 1-carrier W-CDMA (PAR=10.5 dB) Power Gain: 18.3 dB @925–960 MHz Drain Efficiency (ηD): 61.1% (peak) (Doherty architecture, superior to LDMOS) ACPR: -36 dBc @5 MHz offset (3GPP TM1, high linearity) Input Return Loss: < -10 dB (integrated 50Ω input matching) Quiescent Drain Current (Idq): 100 mA (carrier path) Thermal Resistance (junction to case): 0.15 K/W…

HF / VHF Power LDMOS Ultra Low ESR RF Capacitor 2-Stage Doherty MMIC GaN Power Transistor RF And Microwave MLCC