RF MOSFET Transistors BLC10G27XS-551AVT

Power LDMOS Transistor Model: BLC10G27XS-551AVT   Manufacturer: Ampleon   Product Type: 10th Generation 28V LDMOS Packaged Asymmetric Doherty Power Transistor, optimized for 2.62–2.69GHz 5G NR n78 band macro base station final-stage power amplification applications   Key Specifications Parameter Specification Frequency Range 2620 MHz ~ 2690 MHz (Precisely covers 5G NR n78 core band) Peak Output Power 550 W Continuous Wave (CW), in Asymmetric Doherty Configuration Typical Power Gain 13.5 dB (Doherty operation mode) Typical Drain Efficiency 66.7% (Industry-leading level, significantly reducing base station energy consumption) Supply Voltage 28V nominal, Maximum Rated Voltage 65V Quiescent Current 750 mA (main path), 0 mA (peaking path) typical Package Type SOT1258-4 (OMP-780-4F-1), 4-pin RF power package with high-efficiency thermal pad Thermal Resistance Junction-to-case thermal resistance as low as 0.22 K/W, excellent heat dissipation performance Special Feat…

HF / VHF Power LDMOS Ultra Low ESR RF Capacitor 2-Stage Doherty MMIC GaN Power Transistor RF And Microwave MLCC