BLP0408H9S30 BLP0408H9S30Z RF MOSFET LDMOS

BLP0408H9S30Z is a 30 W medium-power LDMOS RF driver transistor manufactured by Ampleon, adopting the 9th generation high-voltage (50V) LDMOS process technology. It is specifically designed for 400–860 MHz (UHF band) broadcast transmitters, Class-AB transmitters and industrial applications, housed in a compact surface-mount package (SOT-1482-1/TO-270-2F-1). Featuring exceptional broadband performance, high efficiency and extreme ruggedness, it is ideal for driver-stage amplification in digital and analog transmitters.     Key Features   Broadband & High-Efficiency Performance: Typical output power of 30 W at 470 MHz, power gain up to 20.2 dB, and drain efficiency of 62% (VDS=50 V, IDQ=100 mA), delivering excellent energy efficiency. Exceptional Ruggedness: Withstands 20:1 full-band VSWR load mismatch at 50 V supply voltage, featuring outstanding shock resistance for harsh operating conditions. Integrated ESD Protection: Built-in dual-sided ESD protection circuitry significantly i…

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