B10G4750N12DL B10G4750N12DLZ RF Mosfet LDMOS

2-Stage Doherty MMIC Model: B10G4750N12DL   Manufacturer: Ampleon   Product Type: 10th Generation 28V LDMOS 3-stage Fully Integrated Doherty MMIC RF Power Amplifier, optimized for 4.7–5.0GHz band (covering 5G NR n79 high-frequency band) small cell and general-purpose driver applications, achieving perfect balance between high integration and efficiency with advanced LDMOS technologyAmpleon   Key Specifications Parameter Specification Frequency Range 4700 MHz ~ 5000 MHz (Precisely covers 5G NR n79 high-frequency core band) Peak Output Power 12W Continuous Wave (CW), in Doherty Configuration (40.8dBm typical, up to 41dBm at 28V supply) Typical Power Gain 30 dB (at 28V supply, 4850MHz) Typical Drain Efficiency 32% (at 10dB OBO, 1-carrier W-CDMA signal, PAR=9.9dB, 4850MHz) Supply Voltage 26V/28V nominal, Maximum Rated Drain-Source Breakdown Voltage 65V Quiescent Current 30 mA (carrier path), independent biasing for peaking path (VGSq(peak)=VGSq(carrier)-0.4V) Package…

HF / VHF Power LDMOS Ultra Low ESR RF Capacitor 2-Stage Doherty MMIC GaN Power Transistor RF And Microwave MLCC