Robust Full P-type Boron Doped Mono Wafers

P-type silicon wafers Minority carrier lifetime: ≥70us Resistivity: 0.4-1.1Ω.cm Carbon content: ≤0.5×1017 atoms/cm3 Oxygen content: ≤7.5×1017 atoms/cm3   182 silicon wafers Dimension：182±0.25mm Doping mode: P-type gallium doped   210 silicon wafers Dimension：210±0.25mm Doping mode: P-type gallium doped   Customized silicon wafers   Material properties Item Specification Testing method Growth mode CZ / Crystal orientation ＜100＞±3° X-ray diffraction method Conductivity type P type P/N tester Dislocation density ≤500 X-ray diffractometer (ASTM F26-1987)   Electrical properties Item Specification Testing method Oxygen content ≤7.5×1017atoms/cm3 Fourier transform infrared spectrometer Carbon content ≤0.5×1017atoms/cm3 Fourier transform infrared spectrometer Resistivity 0.4-1.1Ω.cm Automatic silicon wafer detection equipment Minority carrier lifetime ≥70us Sinton BCT-400 QSSPC Sinton BCT-400 QSSPC quasi-…

Half-sliced Silicon Wafers P-type Silicon Rods P-type Silicon Wafers N-type Silicon Rods N-type Silicon Wafers